PMGD280UN,115 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Nexperia

Model:

PMGD280UN,115

Description:

MOSFET 2N-CH 20V 0.87A 6TSSOP

Stock:

26032

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.08

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

870mA

Drain source voltage (Vdss)

20V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

0.89nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

45pF @ 20V

On resistance (maximum) for different Ids and Vgs

340 mΩ @ 200mA,4.5V

Power - maximum

400mW

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR,CT

series

TrenchMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载PMGD280UN,115.pdf

PMGD280UN,115（FET, MOSFET）ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26032,Price reference "real-time change" China/Hongkong。 PMGD280UN,115 package/specs, Download PMGD280UN,115、Datasheet。